论文标题
准碳酸FET的理论：稳态状态和低频噪声
Theory of quasi-ballistic FET: steady-state regime and low-frequency noise
论文作者
论文摘要
我们介绍了准焊接FET中稳态状态和低频噪声的理论分析。噪声分析基于Langevin方法，该方法解释了波动的微观来源，起源于频道内电子散射。载体浓度，速度和静电电势的局部波动的一般公式，因为它们沿通道的分布是施加电压/电流的功能。考虑了两个具有稳定电流和稳定电压的电路机制。比较了具有不同弹道性的设备的噪声强度。我们建议，所提出的分析可以更好地理解电子传输的物理和准焊接FET中的波动，改善其理论描述，并且对设备模拟和设计可能很有用。
We present the theoretical analysis of steady state regimes and low-frequency noises in quasi-ballistic FETs. The noise analysis is based on the Langevin approach, which accounts for the microscopic sources of fluctuations originated from intrachannel electron scattering. The general formulas for local fluctuations of the carrier concentration, velocity and electrostatic potential as well, as their distributions along the channel are found as functions of applied voltage/current. Two circuit regimes with stabilized current and stabilized voltage are considered. The noise intensities for the devices with different ballisticity are compared. We suggest that the presented analysis makes better comprehension of physics of electron transport and fluctuations in quasi-ballistic FETs, improves their theoretical description and can be useful for device simulation and design.
