论文标题

100 GHz带宽,1伏近红外的电磁马赫 - Zhhnder调节器

100 GHz Bandwidth, 1 Volt Near-infrared Electro-optic Mach-Zehnder Modulator

论文作者

Valdez, Forrest, Mere, Viphretuo, Mookherjea, Shayan

论文摘要

近红外波长显示了集成的杂化薄膜锂(TFLN)电元素齐汉德调制器(MZM)。该设计使用键合的TFLN来平稳化氮化硅波导电路,并且不需要TFLN的蚀刻或模式。推扣MZM达到了0.8 v $。$ cm的半波电压长度产品($v_πl$)。具有0.4 cm和0.8 cm调制长度的MZM设备显示宽带电响应响应,3 dB带宽超过100 GHz,后者显示带宽与半波电压的比率为100 GHz/v。

An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a bandwidth to half-wave voltage ratio of 100 GHz/V.

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