论文标题

Srmno $ _3 $ prain驱动的抗铁磁交换交互

Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance

论文作者

van Rijn, J. J. L., Wang, D., Sanyal, B., Banerjee, T.

论文摘要

多表象发现对拓扑磁性和对内存逻辑应用的兴趣重新引起了人们的兴趣。其中,拥有强磁电耦合的srmno $ _ {3} $正在引起人们的关注,以设计紧张时共存的磁性和极性顺序。在这里,我们证明了从旋转霍尔磁磁性的相位响应中从新特征中提取的紧张的SMO薄膜中的抗磁交换相互作用,在早期的作品中尚未探索过,例如在磁绝缘体中。我们用一个模型来解释我们的发现,该模型沿[110]方向融合了磁各向异性,并通过DFT研究证实,并且与Srmno $ _ {3} $中铁电偏振的方向一致。从我们的研究中获得的基本见解确定了该材料在用于不同逻辑和内存应用的磁耦合设备中的潜力。

Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and polar orders upon straining. Here we demonstrate antiferromagnetic exchange interactions in strained SMO thin films extracted from a new feature in the phase response of Spin Hall magnetoresistance, which has not been explored in earlier works, such as in magnetic insulators. We explain our findings with a model that incorporates magnetic anisotropy along [110] direction, corroborates with DFT studies and is consistent with the direction of ferroelectric polarization in SrMnO$_{3}$. The fundamental insights obtained from our studies establishes the potential of this material in magnetoelectrically coupled devices for different logic and memory applications.

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