论文标题
由i植入ion植入的ZnO中供体Qubit的特性
Properties of donor qubits in ZnO formed by indium ion implantation
论文作者
论文摘要
Zno中的浅中性供体（D $^{0} $）已成为固态旋转量子台的有前途的候选人。在这里，我们通过植入和随后的退火报告了Zno中D $^{0} $的形成。植入捐赠者的植入光和旋转特性与$ \ textit {intu} $掺杂的供体。供体结合的激子过渡的不均匀线宽小于10 GHz，可与$ \ textit {intu} $的光线宽相媲美。纵向旋转放松时间（$ t_1 $）超过$ \ textit {intu} $ ga供体的报告值，这表明植入损坏的残留不会降低$ t_1 $。供体自旋上的两个激光拉曼光谱揭示了供体电子与核中旋转-9/2的超精细相互作用。这项工作是朝着ZnO中供体量子位的确定性形成的重要一步，可以通过光学访问长寿核自旋记忆。
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
