论文标题
沉积在半导体底物上的肽膜中的有吸引力和排斥性波动引起的压力
Attractive and repulsive fluctuation-induced pressure in peptide films deposited on semiconductor substrates
论文作者
论文摘要
我们考虑沉积在GAAS，GE和ZnS底物上的肽膜中的波动诱导的（Casimir）压力，这些薄膜处于介电状态或金属状态。 Casimir压力的计算是在基本的Lifshitz理论框架内采用所有相关材料的频率介电渗透率的框架进行的。在实验和热力学一致的方法中考虑了半导体底物的电导率。根据我们的结果，沉积在介电型半导体底物上的肽膜中的Casimir压力消失了一些确定的膜厚度，令人反感，对较薄，对较厚的膜有吸引力。确定了这种影响对膜中水和半导体底物的静态介电介电常数的依赖性。对于金属型半导体底物，肽涂层中的casimir压力显示出始终令人反感。讨论了这些结果在微型发行版中薄涂层稳定性问题的可能应用。
We consider the fluctuation-induced (Casimir) pressure in peptide films deposited on GaAs, Ge, and ZnS substrates which are either in dielectric or metallic state. Calculations of the Casimir pressure are performed in the framework of fundamental Lifshitz theory employing the frequency-dependent dielectric permittivities of all involved materials. The electric conductivity of semiconductor substrates is taken into account within the experimentally and thermodynamically consistent approach. According to our results, the Casimir pressure in peptide films deposited on dielectric-type semiconductor substrates vanishes for some definite film thickness, is repulsive for thinner and attractive for thicker films. The dependence of this effect on the fraction of water in the film and on the static dielectric permittivity of semiconductor substrate is determined. For the metallic-type semiconductor substrates, the Casimir pressure in peptide coatings is shown to be always repulsive. Possible applications of these results to the problem of stability of thin coatings in microdevices are discussed.
