论文标题

通过$接口工程操纵分层磁性拓扑绝缘器异质结构中的自旋晶格耦合$

Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering

论文作者

Maity, Sujan, Dey, Dibyendu, Ghosh, Anudeepa, Masanta, Suvadip, De, Binoy Krishna, Kunwar, Hemant Singh, Das, Bikash, Kundu, Tanima, Palit, Mainak, Bera, Satyabrata, Dolui, Kapildeb, Watanabe, Kenji, Taniguchi, Takashi, Yu, Liping, Taraphder, A, Datta, Subhadeep

论文摘要

拓扑绝缘子(TI)中的诱导磁序可以通过将磁性变量沉积在Ti表面上,或用外部延长薄膜或二维(2D)Van der Waals(VDW)材料的堆叠组装来实现。在此,我们报告了在其他非磁性ti bi $ _ \ mathrm {2} $ te $ _ \ mathrm {3} $中的观察,这是由于FEPS $ _ \ MATHRM {3} $(Antififermagnet $ sim $ _ Mathrmagnet $ sim) 120 K),在VDW异质结构框架中。依赖温度的拉曼光谱研究揭示了与通常的声子非谐调性偏离,源于bi $ _ {2} $ _ {2} $ _ {2} $ te $ _ {3} $/feps $ _ {3} $ _ {3} $界面的峰Bi $ _ {2} $ TE $ _ {3} $(106 cm $^{ - 1} $和138 cm $^{ - 1} $在堆叠的异质结构中。 Ginzburg-landau(GL)形式主义,那里的各个声子频率在AFM阶段被采用以理解Hybrid Magneto-Magneto-earlastic模式的起源。同时,将feps $ _3 $的特征性$ t_ \ mathrm {n} $从隔离的片段中的120 K $ _3 $减少到异质结构中的65 k,这可能是由于界面菌株所致,这可能是由于使用密度函数理论(dft ftf ftf的计算研究)导致较小的fe-s-fe键角,从而导致较小的fe-s-fe键角。此外,在Bi $ _ {2} $ te $ _ {3} $/feps $ _ {3} $堆栈中插入Bi $ _ {2} $ te $ _ {2} $ te $ _ {2} $ _ {2} $ te $ _ {3} $中的Anharmonicity。在堆叠的异质结构中控制界面自旋 - 偶联可以在表面代码自旋逻辑设备中具有潜在的应用。

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi$_\mathrm{2}$Te$_\mathrm{3}$, due to the proximity of FePS$_\mathrm{3}$ (an antiferromagnet (AFM), $T_\mathrm{N}$ $\sim$ 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the Bi$_{2}$Te$_{3}$/FePS$_{3}$ interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of Bi$_{2}$Te$_{3}$ (106 cm$^{-1}$ and 138 cm$^{-1}$) in the stacked heterostructure. The Ginzburg-Landau (GL) formalism, where the respective phonon frequencies of Bi$_{2}$Te$_{3}$ couple to phonons of similar frequencies of FePS$_{3}$ in the AFM phase, has been adopted to understand the origin of the hybrid magneto-elastic modes. At the same time, the reduction of characteristic $T_\mathrm{N}$ of FePS$_3$ from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe-S-Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi$_{2}$Te$_{3}$/FePS$_{3}$ stacking regains the anharmonicity in Bi$_{2}$Te$_{3}$. Controlling interfacial spin-phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.

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